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DISCRETE SEMICONDUCTORS
DATA SHEET
PHP125 P-channel enhancement mode MOS transistor
Product specification Supersedes data of 1996 Apr 02 File under Discrete Semiconductors, SC13b 1997 Jun 18
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
FEATURES * High-speed switching * No secondary breakdown * Very low on-resistance. APPLICATIONS * Motor and actuator driver * Power management * Synchronized rectification.
1 4 n.c. s
handbook, halfpage
PHP125
DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package.
d 5
ddd
8
PINNING - SO8 (SOT96-1) PIN 1 2 3 4 5 6 7 8 SYMBOL n.c. s s g d d d d DESCRIPTION not connected source source gate drain drain drain drain CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol.
MAM115
s
g
QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = -1 mA; VDS = VGS Ts = 80 C ID = -1 A; VGS = -10 V Ts = 80 C IS = -1.25 A CONDITIONS - - - -1 - - - MIN. MAX. -30 -1.6 20 -2.8 -2.5 0.25 2.8 V V V V A W UNIT
1997 Jun 18
2
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID IDM Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation Ts = 80 C; note 1 note 2 Ts = 80 C Tamb = 25 C; note 3 Tamb = 25 C; note 4 Tstg Tj IS ISM Notes 1. Ts is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. Value based on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Value based on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 90 K/W. storage temperature operating junction temperature Ts = 80 C note 2 CONDITIONS - - - - - - - -65 -65 - - MIN.
PHP125
MAX. -30 20 -2.5 -10 2.8 2.4 1.1 +150 +150 -2 -8 V V A A
UNIT
W W W C C
Source-drain diode source current (DC) peak pulsed source current A A
MBG848
handbook, halfpage
6
-102 handbook, halfpage ID (A) -10
MBG752
Ptot (W) 4
(1)
tp = 10 s 100 s
-1 P -10-1 tp 0 0 50 100 150 200 Ts (oC) -10-2 -10-1 T -1 -10 t
1 ms
2
= T
tp DC
10 ms 100 ms
2 VDS (V) -10
= 0.01; TS = 80 C. (1) RDSon limitation.
Fig.2 Power derating curve.
Fig.3 SOAR.
1997 Jun 18
3
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point
PHP125
VALUE 25
UNIT K/W
102 handbook, full pagewidth Rth j-s (K/W)
MBG753
= 0.75 0.5 0.33 0.2 0.1 0.05
10
1 0.02 0.01 0 10-1 10-6
P
= T
tp
tp T 10-4 10-3 10-2 10-1
t
10-5
tp (s)
1
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1997 Jun 18
4
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IGSS RDSon Ciss Coss Crss QG QGS QGD PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate leakage current drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge CONDITIONS VGS = 0; ID = -10 A VGS = VDS ; ID = -1 mA VGS = 0; VDS = -24 V VGS = 20 V; VDS = 0 VGS = -4.5 V; ID = -0.5 A VGS = -10 V; ID = -1 A VGS = 0; VDS = -24 V; f = 1 MHz VGS = 0; VDS = -24 V; f = 1 MHz VGS = 0; VDS = -24 V; f = 1 MHz VGS = -10 V; VDS = -15 V; ID = -1 A VGS = -10 V; VDS = -15 V; ID = -1 A VGS = -10 V; VDS = -15 V; ID = -1 A VGS = 0 to -10 V; VDD = -15 V; ID = -1 A; RL = 15 ; Rgen = 6 VGS =-10 to 0 V; VDD = -15 V; ID = -1 A; RL = 15 ; Rgen = 6 MIN. -30 -1 - - - - - - - - - - TYP. - - - - 0.33 0.22 250 140 50 10 1 3
PHP125
MAX. - -2.8 -100 100 0.4 0.25 - - - 25 - -
UNIT V V nA nA pF pF pF nC nC nC
Switching times (see Fig.11) td(on) tf ton td(off) tr toff VSD trr turn-on delay time fall time turn-on switching time turn-off delay time rise time turn-off switching time VGD = 0; IS = -1.25 A IS = -1.25 A; di/dt = 100 A/s - - - - - - - - 4.5 3.5 8 25 15 40 - 150 - - 16 - - 80 -1.6 200 ns ns ns ns ns ns
Source-drain diode source-drain forward voltage reverse recovery time V ns
1997 Jun 18
5
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
PHP125
handbook, halfpage
-10
MBG754
VGS (V) -8
handbook, halfpage I
-12 D (A) -10 -8
MBG756
VGS = -10 V
-7.5 V -6 V -5 V -4.5 V -4 V -3.5 V -3 V -2.5 V
-6 -6 -4 -4 -2 -2
0 0
-2
-4
-6
-8 -10 Qg (nC)
0 0
-2
-4
-6
-8 -10 VDS (V)
VDD = -15 V: ID = -1 A. Tj = 25 C.
Fig.5
Gate-source voltage as a function of total gate charge; typical values.
Fig.6 Output characteristics; typical values.
handbook, halfpage
-10
MBG757
handbook, halfpage
-8
MBG758
ID (A) -8
IS (A) -6
-6 -4 -4 -2
(1)
(2)
(3)
-2
0 0
-2
-4
-6 V -8 GS (V)
0 0 VGD = 0.
-0.4
-0.8
-1.2
-1.6
-2 VSD (V)
-2.4
(1) Tj = 150 C. (2) Tj = 25 C. (3) Tj = -65 C. VDS = -10 V; Tj = 25 C.
Fig.8 Fig.7 Transfer characteristics; typical values.
Source current as a function of source-drain diode forward voltage; typical values.
1997 Jun 18
6
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
PHP125
104 handbook, halfpage
MBG849
MBG850
handbook, halfpage
600
RDSon (m) ID= 100 mA 103 500 mA 1A 2A 3.4 A
C (pF) 400
Ciss 200 Coss Crss
102 0
-2
-4
-6
-8 -10 VGS (V)
0 0
-8
-16
VDS (V)
-24
VDS ID x RDSon; Tj = 25 C.
VGS = 0; f = 1 MHz; Tj = 25 C.
Fig.9
Drain source on-resistance as a function of gate-source voltage; typical values.
Fig.10 Capacitance as a function of drain-source voltage; typical values.
handbook, full pagewidth
0 -VDD Vin
10 %
RL Vout 0 10 % Vout Vin td(on) tr ton 90 %
90 %
10 %
90 % td(off) tf toff
MGD391
Fig.11 Switching time test circuit and input and output waveforms.
1997 Jun 18
7
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
MBG759
PHP125
handbook, halfpage
1.2
handbook, halfpage
1.8
MBG760
k 1.1
k 1.6
(1)
1.0
1.4
(2)
0.9
1.2
0.8
1.0
0.7
0.8
0.6 -75
-25
25
75
125 175 Tj (oC)
0.6 -75
-25
25
75
125 175 Tj (oC)
V GSth at T j k = ------------------------------------- Typical VGSth at: V GSth at 25C (1) ID = -1 mA; VDS =VGS .
R DSon at T j k = ---------------------------------------- Typical RDSon at: R DSon at 25 C (1) ID = -1 A; VGS = -10 V. (2) ID = -0.5 A; VGS = -4.5 V.
Fig.12 Temperature coefficient of gate-source threshold voltage; typical values.
Fig.13 Temperature coefficient of drain-source on-resistance; typical values.
1997 Jun 18
8
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm
PHP125
SOT96-1
D
E
A X
c y HE vMA
Z 8 5
Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.010 0.057 0.069 0.004 0.049
0.019 0.0100 0.014 0.0075
0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024
0.028 0.004 0.012
8 0o
o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03S JEDEC MS-012AA EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 97-05-22
1997 Jun 18
9
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PHP125
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jun 18
10
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
NOTES
PHP125
1997 Jun 18
11
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/03/pp12
Date of release: 1997 Jun 18
Document order number:
9397 750 02383

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